High-speed and high-power GaSb based photodiode for 2.5 μm wavelength operations

By using partially depleted Ga
_0.8
In
_0.2
As
_0.16
Sb
_0.84
absorber in GaSb based photodiodes for 2.5 pm wavelength operation, such device achieves high-speed and high-saturation current (3.6 mA/6 GHz) performances with low dark current (0.7μA at -2V). Device modeling results suggest that the internal carrier response time limits its dynamic performance.