Subterahertz Nanosecond Switches Driven by Second-Long Laser Pulses

Subterahertz semiconductor waveguide switches designed for nanosecond pulse regimes have been studied at much longer pulse durations up to 1 s. The problems of heat dissipation in such switches are discussed. Substituting the microwave Joule heating dissipation mechanism with similarly distributed laser heating in the semiconductor, we can estimate the maximum commutated microwave power, which the switch can operate safely. Operation of a nanosecond-performance switch driven by a 1-s laser pulse, which produced a 1-s microwave pulse at the output, has been demonstrated experimentally. The new typical relaxation time associated with the size of the heat dissipation area in the semiconductor plate has been measured. The process of semiconductor blowout under 20-W laser emission has been recorded and discussed. The minimum commutation time under the maximum waveguide transmittable power has been obtained.