A CMOS Schottky barrier diode with the four-sided cathode

TiSi
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-Si Schottky diode on an n-well is designed and fabricated. The device structure is analyzed in depth. The influence of the main parameters on the diode's cut-off frequency is investigated. The analysis shows that the cut-off frequency increases as the Schottky contact area decreases. The series resistance can be further reduced by employing a four-sided cathode. The designed diode achieves the cut-off frequency of 1.3 THz. The ideality factor is 1.34, and the barrier height is 0.38 eV. The high cut-off frequency makes the proposed diodes suitable for millimeter wave even THz detection.