Design and fabrication of GaAs microwave monolithic integrated circuits using 0.2 /spl mu/m GMMT PHEMT foundry process

Summary form only given. A number of MMICs with operating frequencies from L to X band have been designed and fabricated using the GMMT foundry. All circuits were designed using MMIC CAD Series IV Libra on PC and workstation. The circuit functions include a range of TWAs, LNAs, wide band amplifiers, switches, mixers, oscillators, four bit attenuators, phase shifters and power amplifiers. Fabrication was conducted on 3" GaAs wafers using the GMMT PHEMT process, with 0.3 /spl mu/m gate length, via holes through the substrate, MIM nitride and polyimide capacitors and is fully protected by silicon nitride passivation. The primary applications of GaAs high electron mobility transistor (HEMT) circuits are in satellite receivers, consumer video applications, high frequency scanners, wireless LAN and other low noise front ends. Most of the operating frequencies for this application are in the range from 1 to 15 GHz.