Determination of Reactive RF-Sputtering Parameters for Fabrication of SiOx Films With Specified Refractive Index, for Highly Reflective SiOx Distributed Bragg Reflector

Fabricating materials with specific refractive indices, which do not naturally exist in the nature, has always been an issue. This paper presents a method for fabricating SiO
_x
films with specified refractive index. It is well known that the refractive index of reactively sputtered SiO
_x
films depends on its deposition conditions; in this paper, this fact was employed to fabricate films with arbitrary refractive indices. A statistical study and a Genetic Algorithm are implemented that can determine the deposition conditions (including oxygen partial flow and pressure) for fabricating a film with an arbitrary refractive index in the range of 1.4-4.2. The method was experimentally shown to correctly determine the deposition conditions. The functionality of using the proposed method in fabricating optical components was further evaluated by fabricating a distributed Bragg reflector (DBR) consisting of 4.5 pairs, whose refractive indices of the layers were determined by the proposed method. The DBR featured a high 95% reflection in a bandwidth of more than 270 nm, which can be categorized as a high-quality DBR. The advance of the proposed method is that the films are made from a single target source without making any physical changes in the target or substrate positions.