Modeling and simulations of MOSQWell transistor future building block for optical communication

A new type of silicon MOSFET transistor, coupling both electronic and optical properties, is developed in order to overcome the indirect silicon bandgap constraint, and to serve as a future light emitting device in NIR [0.8-2μm] range, as part of a new building block in integrated circuits allowing ultra-high speed processors. Such QW structure enables discrete energy levels for light emission. Model and simulations are presented.