Pseudo-vertical GaN-based trench gate metal oxide semiconductor field effect transistor

We report on the fabrication and characterisation of an enhancement mode n-channel pseudo-vertical GaN metal oxide semiconductor field effect transistor (MOSFET), which utilizes a high-k dielectric covered trench gate and a top side drain contact. The processing technology has been developed to be easily transferrable to a truly vertical MOSFET on GaN bulk material, as targeted for high-voltage power switching applications. Device functionality is demonstrated by linear transfer characteristic with a decent ON/OFF current ratio of 6 orders of magnitude and clear normally-off operation.