Competitive 1T-DRAM in 28 nm FDSOI technology for low-power embedded memory

We demonstrate experimentally a capacitorless IT-DRAM fabricated with 28 nm FDSOI. The Z
²
-FET memory cell features a large current sense margin and long retention time at T = 25°C and 85°C. Systematic measurements show that Z
²
-FET exhibits negligible OFF-state current at low drain/gate bias and is suitable as a low-power embedded memory.