Performance enhancement of merge pin schottky diode with graphene films as heat sink by ANSYS simulation

In this paper, we simulate graphene on the surface of substrate, using interconnection metallization to connect merge pin schottky (MPS) power diode chip and substrate, then build a thermal model of the device, and perform the finite-element analysis with ANSYS software. In recent years, graphene has attracted a large amount of interest because of its outstanding electric conductivity, ultrahigh thermal conductivity and large specific surface area. Therefore, if graphene films are used as heat sink, heat will diffuse through graphene surface at breakneck speeds, solving the heat accumulation problem of the device. In this work, we simulate the heat dissipation effect of the device with graphene films or without graphene films. Then, we change the thickness of graphene films, contact area between graphene films and heat dissipation substrate, and contact area between interconnection metallization and graphene films.