A 1–4.5 GHz MMIC mixer based on SiGe BiCMOS technology

A MMIC double-balanced passive mixer with on-chip integrated baluns based on 0.25 μm SiGe BiCMOS technology is presented. The mixer core configuration uses ring-connected CMOS transistors. The main MMIC mixer design steps are considered. The construction of integrated on-chip broadside balun is investigated. The MMIC mixer in the test bench with wire bonding has the following characteristics: conversion gain G
_C
is -9...-12.5 dB over the frequency band of 1-4.5 GHz; input power P
_1dB
for 1 dB compression is 12 dBm; size is 1.74×0.6 mm
²
.