650V and 900V, 150A SiC Schottky diode for automotive applications

650V and 900V, 150A SiC Schottky diodes have been manufactured on 150mm SiC wafers using a high yielding Schottky diode process developed in an automotive qualified Si foundry. The 900V diodes have a forward voltage drop of 1.65V at 150A, a breakdown voltage of 1100V at 250uA and leakage current of 600nA at 900V. A 30% reduction in yield is observed with die size increase from 12A to 150A diode due to the impact of defects on leakage current and breakdown voltage. A reduction in substrate thickness will be key to accelerate the commercial readiness of the 650V and 900V high current diodes due to the die size reduction, yield improvement and cost reduction it enables.