Low‐Power High‐Temperature‐Operation‐Tolerant (HTOT) SOI MOSFET

This chapter describes a high‐temperature‐operation‐tolerant (HTOT) metal oxide semiconductor silicon‐on‐insulator (SOI MOSFET) and shows the preliminary results of a simulation of its characteristics. This demonstrated that HTOT SOI MOSFET operates safely at 700 K with no thermal instability because of its expanded effective bandgap. It showed that its threshold voltage is higher than that of the conventional SOI MOSFET because its local thin Si regions offer an expanded effective band gap. The HTOT SOI MOSFET with 1 nm thick local‐thin Si regions is shown to be almost insensitive to temperature for
T
 < 700 K (427 °C). This confirms that HTOT SOI MOSFET is a promising device for future high‐temperature applications.