Study of the Subthreshold Performance and the Effect of Channel Engineering on Deep Submicron Single‐Stage CMOS Amplifiers

This chapter outlines the advantage of using a single‐stage complementary metal oxide semiconductor (CMOS) cascode amplifier over CMOS current‐source amplifier in the subthreshold regime of operation. Apart from extremely low power dissipation, the cascode amplifier is able to produce high voltage gain and low output capacitance. The impact of using a single‐halo (SH) or lateral‐asymmetric channel (LAC) doping on 180 nm MOS devices of the amplifier circuit is investigated. The CMOS PTAT (proportional to absolute temperature) circuit as a temperature sensor for low‐power applications is also studied.