Beyond MRAM: Nonvolatile Logic‐in‐Memory VLSI

The combination of spintronic devices with semiconductor integrated circuits will enable the replacement of conventional dynamic random‐access memory (DRAM) with spin‐transfer torque magnetic random‐access memory (STT‐MRAM) and facilitate high‐performance, low‐power, large‐scale‐integrated (LSI) logic circuits. Logic‐in‐memory architectures can take advantage of complementary metal–oxide–semiconductor/magnetic tunnel junction hybrid technology. The principles and benefits expected from these innovative architectures are explained and illustrated by several types of circuits that have been successfully designed, built, and tested. The benefits of low‐power, high‐performance, nonvolatile, spintronics‐based logic LSIs discussed in this chapter could trigger a revolutionary change in our information‐ and communication‐based society
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