A novel active gate driver for silicon carbide MOSFET

A novel active gate driver (AGD) for silicon carbide (SiC) MOSFET is studied in this paper. The gate driver (GD) increases the gate resistance value during the voltage plateau area of the gate-source voltage, in both turn-on and turn-off transitions. The proposed AGD is validated in both simulation and experimental environments and in hard-switching conditions. The simulation is evaluated in MATLAB/Simulink with 100 kHz of switching frequency and 600 V of dc-bus, whereas, the experimental part was realised at 100 kHz and 100 V of dc-bus. The results show that the gate driver can reduce the over-voltage and ringing, with low switching losses.