Heterogeneously integrated InP based evanescently-coupled high-speed and high-power p-i-n photodiodes on silicon-on-insulator (SOI) substrate

We demonstrate InP based evanescently-coupled p-i-n photodiodes heterogeneously integrated onto silicon-on-insulator substrate. Using advanced waveguide structures and fabrication processes, it simultaneously achieves 67 GHz O-E bandwidth (RC-free), broad optical window (1520–1600nm) with 0.5 A/W internal responsivity, and high saturation currents (9 mA at 70 GHz).