Design and Characterization of Sloped-Field-Plate Enhanced Trench Edge Termination

In this paper, the design and characterization of the sloped-field-plate enhanced trench edge termination structure are carried out. For achieving the ideal planar junction breakdown voltage and high dV/dt performance, structural parameters, including the depth of the slopedfield-plate and the depth and width of the trench, need to be well designed. Using extensive numerical simulations, the above-mentioned design is accomplished. Experimental results show that for 600 V class devices, a breakdown voltage of 757 V can be achieved by the devices with a trench width larger than 20 μm. The breakdown characteristics are verified as the ideal planar junction breakdown by using liquid crystal thermal measurement. Furthermore, the high dV/dt measurement results show that the devices with a trench width larger than 25 μm are capable of handling a high dV/dt of 28.9 kV/μs even at a bus voltage of 750 V.