Simple leakage current and 1/f noise expressions for polycrystalline silicon thin-film transistors

Simple drain current and 1/f noise expressions are presented for polycrystalline silicon (poly-Si) thin-film transistors (TFTs) in leakage regime. The leakage current expression Ids is derived from the thermal field emission mechanism. The leakage current noise power spectral density (PSD) expression S
Ids
is derived from the carrier number fluctuation theory. It is proved that S
Ids
is proportional to ID
S
, approximately. The current and noise expressions are verified by available experimental data.