A floating high-voltage level shifter used in a pre-charge circuit for large-size AMOLED displays

In this paper, we propose a floating high-voltage level shifter without static power consumption which is used in a pre-charge circuit for large-size active matrix organic light-emitting diode (AMOLED) displays. The proposed level shifter is a high voltage tolerant level shifter with only middle-voltage transistors which operate within the voltage limits. No high-voltage transistors make it occupy less silicon areas. In addition, the proposed level shifter can achieve floating shift behavior without the threshold loss suffered by the conventional high-voltage level shifter. The circuit is simulated in 0.18um CMOS process through Cadence. We analyze the circuit over different process corners and the simulation results show a rising time of 2.13ns and a falling time of 1.58ns typically.