Single-Event Measurement and Analysis of Antimony-Based p-Channel Quantum-Well MOSFETs With High- $\kappa $ Dielectric

Heavy-ion-induced single-event measurements for p-channel InGaSb quantum-well metal-on-insulator field-effect transistors (QW-MOSFETs) are demonstrated for a range of gate bias conditions. Two p-channel In
_0.33
Ga
_0.67
Sb QW structures were evaluated- a buried channel structure and a surface channel structure with and without an Al
_0.8
In
_0.2
Sb barrier layer respectively. The heavy-ion induced transient response is investigated for both structures. A slowly relaxing transient decay is observed in the buried channel device which is responsible for the bulk of the charge enhancement. It is effectively eliminated with the removal of the Al
_0.8
In
_0.2
Sb barrier, leading to a 10× reduction in collected charge in the surface channel device. To analyze the transient response, a calibrated TCAD device simulation equipped with a heavy ion induced ionization model has been developed, which shows excellent agreement with the measured results for the entire range of evaluated gate bias conditions. The simulation analysis reveals that the charge collection enhancement phenomenon in a p-channel InGaSb QW-MOSFET is associated with the increased bipolar gain due to electron trapping in the Al
_0.8
In
_0.2
Sb barrier.