Dual-gate HEMT parameter extraction based on 2.5D multiport simulation of passive structures

A new versatile parasitic network extraction method for microwave dual-gate and cascode HEMTs is presented which is based on 2.5D EM simulation of the passive metallization structures. After port count reduction and offset capacitance correction at the internal FET reference planes, a scalable matrix shell model is obtained. The intrinsic FET model is extracted from a separate characterization of a common-source FET. The matrix shell model is compared to a fully distributed model and to measured S-parameters for AlGaN/GaN HEMTs with a gate length of 0.1 μm.