Graphene field effect transistors on flexible substrate: Stable process and high RF performance

We report a simple and low temperature fabrication process suitable for flexible substrate based graphene field effect transistors (GFETs). Transistors with 300 nm gate length and different channel width (12 μm and 24 μm) were successfully fabricated on Kapton substrate. We report as-measured current gain cut-off frequency of 27 GHz and maximum oscillation frequency of 12 GHz. The high performance transistors with high yield in this work demonstrate the great potential of our full process for flexible GFETs.