Investigation of carrier recombination process in top-down fabricated GaAs nano-disc array structure by photoluminescence measurements

This New top-down fabrication process using bio-template and neutral beam etching process have succeeded to grow GaAs quantum nano disc (ND) for optical communication devices. The size, the alignment and the density of ND were well controlled. Low temperature photoluminescence measurement confirmed that the quantum energy levels were formed in the present structure and made clear the usefulness of the top-down process toward a defect-free ND fabrication. Strong luminescence was observed even in an as-etched samples.