Characterization of Single-Event Transient Pulse Broadening Effect in 65 nm Bulk Inverter Chains Using Heavy Ion Microbeam

The propagation induced pulse broadening (PIPB) effect of the SET pulses in 65nm bulk inverter chains is characterized and discussed generated by the heavy ion microbeam. An odd-even separated layout placement strategy is implemented in the test chip to improve the resolution of the broadened width measurement. The experiment results show that bigger transistor size is able to inhibit the PIPB effect better, but the well structure and layout topology show insignificant influence on the PIPB effect of the SET pulses generated by the low LET heavy ions.