Modeling and simulation of single- and multiple-gate 2D MESFETs

We describe a physically based model for a two-dimensional (2D) MESFET, a novel hetero-dimensional transistor. The model is valid for a "single" gate in which the sidewall contacts are biased together, a dual-gate configuration in which the gates are biased independently, and a multiple-gate configuration for three or more side gates. The model has been implemented in the circuit simulator AIM-SPICE. The modeling results are in good agreement with the experimental data.