Record-breaking high-power InGaN-based laser-diodes using novel thick-waveguide structure

High-power operation over 7W in InGaN laser-diodes is achieved by an undoped thick-waveguide structure where an optical-loss is suppressed by reduced light-leakage to the absorbing p-cladding. Operating voltage increase due to the high-resistive undoped layer is successfully eliminated by utilizing the potential flattening effect of electrons reflected from electron-overflow-suppression layer.