Influence of barrier structure on polarization effect in near ultraviolet light-emitting diodes

Specific design of barrier in the AlGaN-based near ultraviolet (NUV) light-emitting diodes (LEDs) is investigated numerically. Simulation results reveal that NUV LEDs with the proposed p-type/n-type barrier can effectively reduce the polarization-induced electrostatic field, and thus enhance the spatial overlap of electron and hole wavefunctions in the wells.