Realization of over 10% EQE AlGaN deep-UV LED by using transparent p-AlGaN contact layer

The improvement of light-extraction efficiency (LEE) is major subject for AlGaN deep-ultraviolet light-emitting diodes (DUV-LEDs), because the LEE suppressed to be quite low due to the heavy absorption through p-GaN contact layer. We demonstrated over 10% external quantum efficiency in an AlGaN DUV-LED by improving LEE by introducing transparent p-AlGaN contact layer.