Thresholdless lasing of nitride nanobeam cavities on silicon

We present a temperature dependent optical and quantum-optical characterization of close-to-ideal lasing in GaN-based nanobeam cavities. Measuring the photon statistics of emission allows us to prove high-β lasing at room temperature, and thresholdless lasing at 156K. Thresholdless lasing is explained via temperature dependent carrier redistribution in the 0D/2D gain medium.