Dot state properties of 1.3 µm low-loss InAs quantum dot lasers grown directly on Si

In the first comparison of identical 1.3μm InAs/AlGaAs quantum-dot structures grown on silicon (with defect filter layers, but no germanium) and GaAs substrates, both demonstrate dot-state emission of similar intensity, spectral breadth and areal dot density (3.3-3.5×10
¹⁰
cm
^-2
) with a 35nm blue shift on silicon.