Broadband terahertz modulation using SiO2/Si gated monolayer graphene

We have experimentally realized a broadband THz modulator in a total internal reflection geometry using SiO
₂
/Si gated monolayer graphene. The modulation depth in our device is up to 83% over the range of 0.2-0.6 THz, and can be further improved by extending the size of our modulator and using multiple reflections.