Fabrication of through silicon via with highly phosphorus-doped polycrystalline Si plugs for driving an active-matrix nanocrystalline Si electron emitter array

Present advanced-process for the fabrication of through silicon via (TSV) with highly phosphorus-doped n
⁺⁺
-polycrystalline Si plugs for driving an active-matrix nanocrystalline Si (nc-Si) electron emitter array was described. The resistance per one TSV was measured to be 150 Ω, and voltage drop at the TSV plug in a normal driving operation was sufficiently small to apply the diode current to the nc-Si layer. Electrons could be effectively injected into the nc-Si layer from the back-side n
⁺⁺
-poly-Si through the TSV plugs, and were quasi-ballistically emitted through the surface Ti/Au electrode.