Effect of magnetron sputtering (RF and DC) parameters on the TaB2 films structure

Effect of bias potential applied to substrate on the structure of tantalum diboride films deposited by nonreactive RF-magnetron and unbalanced magnetron at direct current (DC) sputtering of TaB
₂
target in argon was investigated. It was shown that for both processes the value of the bias potential applied to the substrate is crucial to the films structure formation, which determines respectively their physical and mechanical properties.