Three‐Dimensional Integration of Ge and Two‐Dimensional Materials for One‐Dimensional Devices

This chapter focuses primarily on sequential 3D, since only the high interconnection density achieved in this case is capable of supporting a scaling path in the vertical dimension. The successful implementation of a sequential 3D integration scheme requires a strong research effort in developing low‐thermal‐budget front‐end of line (FEOL) processing. The chapter summarizes the status of current research in FEOL processing compatible with sequential 3D integration, as well as a view of the main outstanding challenges. It explores the possibility of integrating novel concepts based on 2D materials. In addition, sequential 3D integration has a strong impact not only at the device level but also at the system level, requiring the development of a 3D design ecosystem. In conclusion, one can observe that the technological foundation for sequential 3D integration is almost in place, since great progress has been made to develop low‐thermal‐budget processing and integration of novel materials.