Effect of surface texturization of In2S3 window layer in Cu2O/In2S3 solar cells

A thin layer of p-type Cu
₂
O was grown over flexible 30 μm thick copper substrates. Using Injection Chemical Vapor Deposition technique, n-type In
₂
S
₃
thin films was grown over the Cu
₂
O layer. A p-n junction was thus realized. The Cu
₂
O/In
₂
S
₃
hetero-structure showed photovoltaic behavior. A solar cell with the structure Cu/Cu
₂
O/In
₂
S
₃
/Ag could be fabricated. An acidic texturization sequence was developed which increased the photo-sensitivity of the In
₂
S
₃
window layer. The Cu/Cu
₂
O/In
₂
S
₃
/Ag hetero-structure with the textured window layer had an open circuit voltage of 377 mV, short circuit current density of 0.118 mA/cm
²
and fill factor of 33.34 %.