Microwave Transistor Power Rectifiers and Applications

This paper presents design, analysis and experimental results on synchronous and self- synchronous microwave transistor rectifiers implemented with GaN HEMTs at frequencies from 2 to 10GHz. The rectifier/power amplifier duality is explained and measurements confirming this mode of operation are presented. Finally, rectifier applications in wireless power transfer and high- frequency integrated dc-dc converters are discussed, including a GaN MMIC dc-dc converter switching at 4.6GHz.