Influence of CdS and ZnxSn1−xOy buffer layers on the photoluminescence of Cu(In, Ga)Se2 thin films

In this work, an optical study by photoluminescence on the influence of different buffer layers on a Cu(In, Ga)Se
₂
(CIGS) thin film is presented. Chemical bath deposited CdS was compared with atomic layer deposited Zn
_x
Sn
_1-x
O
_y
(ZnSnO). The CIGS bulk and CIGS/buffer interface in both samples are strongly influenced by fluctuating potentials, being less pronounced for the sample with the ZnSnO buffer layer. This study emphasizes the potential application of the ZnSnO semiconductor in CIGS based solar cells.