2-d materials and devices

To overcome the performance limit of CMOS technologies, new device structures such as ultrathin body MOSFETs and FinFETs have been proposed to enhance the electrostatic gate controllability over the channel. This chapter discusses the electronic properties of 2-D materials composed of carbon (C), silicon (Si) and germanium (Ge) elements, and further examines their performance potentials as an FET channel. It describes the fundamental features of 2-D materials and advantages of MOSFETs using 2-D material channels. The chapter intends to analyze atomic monolayer semiconductor FETs composed of Si, Ge and C elements. It addresses the subject and investigate systematically the ultimate device performances of both FETs, based on atomistic and ballistic simulation approaches. Silicene or germanene is a monolayer honeycomb lattice made of Si or Ge, similar to graphene made of carbon. The chapter compares the performance potentials of A-SiNR, A-GeNR and A-GNR-FETs under the ballistic transport using the top-of-the barrier (ToB) model.