Comparative characteristics of diffusion-welded high-voltage stacks and connected in series Schottky diodes

In the work presented in this paper we have considered the prototype of a diffusion-welded (DW) high-voltage diode stack made on the basis of commercial SiC JBS diode chips. Implementation of vertical integration for four diode chips yielded a stack with a reverse current of 25 μA under a reverse voltage of 6 kV. The capacitance of the stack at zero bias was reduced more than three-fold in comparison with the initial chips. The reverse recovery time of the stack was 7.4 ns. The paper also provides a comparison of DW stack with the connected in series packaged Schottky diodes. The paper proposes a convenient analytical approach to the estimation of parameters of modular compositions with vertical architecture.