Method of samples preparation intended for research of deep centers in i-, n-, and p-layers of GaAs p+-pin-n+ structures and result of analysis

In this paper are proposed the technique of fragmentation of the p
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-pin-n
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structures and preparation of the samples for investigation of transient processes in the space charge region at the interfaces in pin structures. As an example, some results of capacitance-voltage (C-V) investigations and the results of capacity relaxation studies is presented for Schottky contact to p-zone of pin structure. The possibilities of analytical processing of the results are demonstrated. The specifically built spatial energy diagram for basic deep centers in their relation to each other and to the bottom of valence band and the Fermi level is shown as well.