Theory of Quantum Transport in Graphene Devices With Radiation Induced Coulomb Scatterers

We demonstrate a quantum transport model for total ionizing dose (TID) effects in graphene devices fabricated on silicon dioxide (SiO
₂
). The scattering matrix method was used to compare transfer characteristics with experimental measurements. To match the pristine transfer curve, the contact on-site energy levels were pinned to +75 meV relative to the channel. TID effects were modeled by introducing positively charged traps throughout the gate oxide. Spatially resolved local density of states and particle current density reveal the effect of the Coulomb potential due to the positively charged traps.