Group IV compounds for integrated photonic applications

We report methods of engineering the bandgap of SiGe and Ge compounds for the fabrication of electro absorption modulators and light emitting devices. We demonstrate uniform composition, single crystal, defect free SiGe-on-insulator formation. The composition can be tuned in different positions of the chip by modifying the structural design. We also demonstrate Ge disks with strain values of 1.1 and 0.6%.