A 90nm BiCMOS technology featuring 400GHz fMAX SiGe:C HBT

A 90nm BiCMOS technology with a SiGe:C HBT having f
_MAX
>400GHz is presented. Both lateral and vertical scaling of the SiGe bipolar transistor are described, enabling SiGe HBT performance metrics f
_T
/f
_MAX
of ~230GHz/400GHz to be achieved with a minimum gate delay of <;3ps. A medium breakdown device is also integrated, achieving an f
_T
*BV
_CEO
product of 310GHz*V. CMOS implant and HBT process optimizations to address the additional thermal budget of the HBT module are also discussed. In concert with high-quality passives, this technology is especially suited for millimeter wave applications with high digital gate density requirements.