InGaP/GaAs superlatticed resonant-tunneling transistor (SRTT)

In this presentation, we have fabricated and demonstrated a new InGaP/GaAs RTT device. The good transistor performances and an interesting three-terminal controlled multiple N-shaped NDR phenomena are observed at room temperature. In our proposed structure, a 5-period InGaP/GaAs superlattice is employed to serve the RT route and the confinement barrier for holes. Thus a high emitter injection efficiency and high current gain performance can be obtained.