D–Band RF–MEMS SPDT Switch in a $0.13~\mu$ m SiGe BiCMOS Technology

This letter presents a D-Band (110-170 GHz) RF-MEMS based Single-Pole Double-Throw (SPDT) switch fabricated in a 0.13 μm SiGe BiCMOS technology. The on-wafer S-parameter measurements of the RF-MEMS based SPDT switch show beyond state of the art RF performances, 1.42 dB insertion loss and 54.5 dB isolation at 140 GHz. The SPDT switch consists of a tee junction connected to two Single-Pole Single-Throw (SPST) RF-MEMS switches. The RF-MEMS switch is actuated using 60 V actuation voltage and provides less than 10 μs switch-on and switch-off times. To the best of the authors' knowledge, the results achieved in this study are the lowest insertion loss and the highest isolation of a SPDT reported in D-band.