Dual-Side Ceramic Power Module for Fast Switching Silicon Carbide Transistors

This paper presents a concept for a low-inductance ceramic power module for fast switching silicon carbide transistors where the module is submerged in a cooling liquid. For this approach a design of an inverter half-bridge power module based on a ceramic substrate is proposed. Silver sintering is used to contact the power semiconductors to the substrate and to form the interconnection with the lead-frame. First prototypes have been assembled and tested in a double-pulse setup for characterization of the switching behavior.