InP- and GaAs-based quantum cascade lasers

We report quantum cascade lasers grown on InP and GaAs by molecular beam epitaxy. On InP, lattice matched structures exceeding 80 mW of pulsed optical power at room temperature are electrically tunable from 10.2 to 10.5 /spl mu/m. Strain compensated heterostructures emitting at 4.9 /spl mu/m operate almost up to room temperature. The first lasing AlGaAs/GaAs quantum cascade laser emitting at 9.4 /spl mu/m and operating up to 160 K is also presented.