Implantation optimization for 1.55 /spl mu/m VCSEL

We present the results about the implantation step on the realization of long wavelength VCSELs emitting at 1.55 /spl mu/m. The basic structure is based on a bottom n-doped InP-InGaAsP DBR and a top n-doped GaAs/AlAs metamorphic DBR. The current injection is done through a reverse biased tunnel junction and the current is localized through an implantation step. In this paper we present the influence of the implantation energies and the type of ions (H/sup +/ or O/sup +/) on the laser performance.