1.3 /spl mu/m InAsP-GaInAsP-InGaP strain-compensated MQW lasers grown by GSMBE

We studied strain-compensated MQW lasers which have GaInAsP intermediate layer between 1.45% compressively strained InAsP wells and 0.98% tensile strained InGaP barriers by gas-source MBE. X-ray diffraction measurements revealed that monocrystalline was confirmed even in 15 strained quantum wells. Threshold current density per well in lasers decreased with increasing the number of wells. The temperature characteristics of threshold current density and differential quantum efficiency were improved with increasing the number of wells. The BH lasers which have 15 quantum wells showed excellent performance such as low threshold current (5.2 mA@ 20/spl deg/C) and high T/sub o/ (75 K@ 20/spl deg/C-70/spl deg/C).