Planarised InP regrowths around tall and narrow mesas using chloride-MOVPE [and electroabsorption modulator fabrication]

The introduction of PCl/sub 3/ into the MOVPE growth process dramatically alters the regrowth of InP around tall, narrow mesas. Planar regions 48 /spl mu/m wide have been grown around vertical-walled mesas only 1 /spl mu/m wide. Polycrystalline deposits are completely eliminated from the silica mask. Furthermore, this process has simultaneously produced planarised infilling growth of orthogonal channels. Electroabsorption modulators with low device capacitance and high modulation depth have been fabricated using this process, and have been used in systems operating at 100 Gbit/s.